Products Description Specifications Product AttributeAttribute ValueSearch SimilarManufacturer:Texas InstrumentsProduct Category:MOSFETRoHS: DetailsTechnology:Si Mounting Style:SMD/SMTPackage / Case:WSON-6Transistor Polarity:N-ChannelNumber of Channels:1 ChannelVds - Drain-Source Breakdown Voltage:25 VId - Continuous Drain Current:5 ARds On - Drain-Source Resistance:24 mOhmsVgs - Gate-Source Voltage:- 8 V, + 8 VVgs th - Gate-Source Threshold Voltage:900 mVQg - Gate Charge:2 nCMinimum Operating Temperature:- 55 CMaximum Operating Temperature:+ 150 CPd - Power Dissipation:15 WChannel Mode:EnhancementTradename:NexFETPackaging:ReelPackaging:Cut TapePackaging:MouseReelBrand:Texas InstrumentsConfiguration:SingleFall Time:1.7 nsHeight:0.75 mmLength:2 mmProduct Type:MOSFETRise Time:4.4 nsSeries:CSD16301Q2 Factory Pack Quantity:3000Subcategory:MOSFETsTransistor Type:1 N-Channel Power MOSFETTypical Turn-Off Delay Time…

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Shenzhen Kaixuanye Technology Co., Ltd.

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