Heat Dissipation Aluminum Nitride Ceramic Substrate

Heat Dissipation Aluminum Nitride Ceramic Substrate The specification 1. We are supplying with many round, square and rectangular aluminum nitride ceramic substrate 2. The typical thickness of wafer/substrate covers 0.38mm, 0.5mm, 0.635mm, 1.0mm, 1.2mm 3. The biggest diameter of round ceramic wafer can be up to 400mm in 3mm, 4mm, 5mm thick 4. The max. side-length of square and rectangular ceramic base can be 400mm by 500mm 5. Surface treatment: it can be one-side, or double side polished, metalizing or sand blasting The main features 1. Similar coefficient of thermal expansion to that of silicon (Si), it helps to achieve high reliability of Si chip 2. Exceptional thermal conductivity (170 ~220) W/m.k and high insulation resistance and breakdown strength 3. The sintering temperature to be 1900℃ under vacuum hot pressed furnace, the density to be 3.3g/cm3 4. The mechanical strength and hardness of AlN base after sintering is much higher than tape casting and…

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